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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4110 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 w w scs .i w VALUE 500 UNIT V 400 7 V V 25 40 8 160 W 2.5 150 -55~150 A A A .cn mi e PC Collector Power Dissipation @ Ta=25 TJ Tstg Junction Temperature Storage Temperature Range isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 1mA; IE= 0 IC= 10mA; RBE= IE= 1m A; IC= 0 IC= 16A; IB= 3.2A IC= 16A; IB= 3.2A VCB= 400V ; IE= 0 MIN 500 400 7 2SC4110 TYP. MAX UNIT V V V 0.8 1.5 V V A A Current-Gain--Bandwidth Product Output Capacitance w w w. sem isc VEB= 5V; IC= 0 IC= 3.2A ; VCE= 5V IC= 16A ; VCE= 5V IC= 10mA ; VCE= 5V IC= 3.2A ; VCE= 10V .cn i 15 10 10 20 300 10 10 50 MHz pF IE= 0; VCB= 10V; ftest= 1.0MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= 20A, IB1= 4A; IB2= -8A RL= 10; VCC= 200V 0.5 2.5 0.3 s s s hFE-1 Classifications L 15-30 M 20-40 N 30-50 isc Websitewww.iscsemi.cn 2 |
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